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<\/a><\/a>\n\u201cAtomera\u2019s latest GaN-on-Si devices show a substantial\u00a0reduction in parasitic interface charge, by more than an order of magnitude, and our RF characterization of the first MST-enabled samples confirms a significant reduction in RF losses,\u201d said Mostafa Emam, Founder & CEO at Incize. \u201cBeyond the small-signal improvements, the large-signal results are particularly compelling. The best-performing MST samples exhibit outstanding linearity and power handling. This linearity benefit extends into the high-power regime, approaching performance levels typically associated with advanced RF SOI technologies.\u00a0For GaN-on-Si, these results represent a very exciting step forward.\u201d<\/p>
\nAtomera\u2019s approach, MST, introduces a thin, oxygen-modified layer near the surface of the silicon wafer, creating a more favorable platform for GaN growth and making silicon a more viable foundation for high-performance RF devices. This controlled layer modifies the silicon lattice structure and helps block the diffusion of electrical dopants, improving crystal quality at the GaN\/silicon interface.<\/p>
\n\u201cWe\u2019re fundamentally changing the economics of GaN. Atomera\u2019s MST is removing barriers to GaN-on-Silicon-based RF systems, unlocking breakthrough RF performance on low-cost silicon substrates,\u201d said Scott Bibaud, president and CEO of Atomera. \u201cSuccessfully overcoming challenges like the parasitic channel positions Atomera to achieve a competitive advantage in GaN-on-Silicon, which we believe will provide growth opportunities for Atomera in advanced RF and power electronics.\u201d\u00a0<\/p>
\nIn Atomera\u2019s testing, MST enabled more than a 10x reduction in parasitic channel charge, reducing a key mechanism of RF power loss and supporting improved high-frequency GaN device performance. Furthermore, the test data has proven that MST will allow devices to handle significant power while maintaining signal quality, or linearity, under stress.<\/p>
\n\u201cWe are delighted by the recent RF test data from Incize,\u201d said Robert Mears, Founder & CTO of Atomera. \u201cLinearity is a top care-about for RF designers, and the new data shows MST GaN-on-Silicon achieving both the ultra-low RF losses and linearity metrics of advanced trap-rich RF SOI. At the benchmark input power of 30mW, the linearity is exceptional, 1000x better than the GaN-on-silicon reference wafer. The MST benefit extends all the way to 10W input power.\u201d<\/p>
\nExplore our white paper<\/a> to learn more.\u00a0<\/p> \nAbout\u00a0Atomera<\/b><\/p> \nAtomera Incorporated\u00a0(NASDAQ: ATOM) is a semiconductor materials and technology licensing company focused on deploying its proprietary performance-enhancing technology into the semiconductor industry.\u00a0Atomera\u00a0has developed Mears Silicon Technology\u2122, or MST\u00ae<\/sup>, a quantum-engineered thin-film technology that increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor industry roadmap. More information can be found at\u00a0www.atomera.com<\/b><\/a>.<\/p>