{"id":28094,"date":"2026-06-30T07:00:00","date_gmt":"2026-06-30T05:00:00","guid":{"rendered":"http:\/\/stocks-future.com\/?guid=d606a7bb2bbdce938f1e133f0a224322"},"modified":"2026-06-30T07:00:00","modified_gmt":"2026-06-30T05:00:00","slug":"toshiba-launches-80v-n-channel-power-mosfet-using-its-latest-generation-process-to-improve-efficiency-in-ai-data-centers","status":"publish","type":"post","link":"https:\/\/stocks-future.com\/?p=28094","title":{"rendered":"Toshiba Launches 80V N-Channel Power MOSFET Using Its Latest Generation Process to Improve Efficiency in AI Data Centers"},"content":{"rendered":"

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation<\/a> (\"Toshiba\") has launched \u201cTPM1R408RH<\/a>,\u201d an 80V N-channel power MOSFET fabricated using U-MOS11-H, Toshiba\u2019s latest-generation process[1]<\/sup>. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in AI data centers and communications base stations. Shipments start today.<\/p><\/a><\/a><\/a><\/a>

\nThe continuing expansion in AI processing has increased power demand in data centers, while advances in communications infrastructure have further intensified requirements for higher efficiency, smaller size (higher power density), and lower electromagnetic interference (EMI) in switched-mode power supplies. As power losses directly affect system power consumption, heat generation, and cooling load, it is important to deploy power semiconductors with characteristics that support a balanced reduction in conduction and switching losses and that contribute to overall system optimization, including improved EMI suppression, thermal design, and ease of mounting.<\/p>

\nTPM1R408RH features an optimized device structure and realizes a drain-source On-resistance of 1.4m\u03a9 (max)[2]<\/sup>, approximately 26% lower than that of \u201cTPM1R908QM,\u201d an 80V Toshiba product fabricated using Toshiba\u2019s previous-generation U-MOS X-H process. It also improves the trade-off between drain-source On-resistance (RDS(ON)<\/sub>) and total gate charge (Qg<\/sub>), achieving approximately a 45% reduction in the figure of merit, RDS(ON)<\/sub> \u00d7 Qg<\/sub> over TPM1R908QM. These characteristics represent industry-leading[3]<\/sup> levels of low power loss.<\/p>

\nTPM1R408RH also suppresses spike voltage generated between the drain and source during switching, helping to reduce EMI in switched-mode power supplies. EMI suppression often requires rework in later stages of design, but suppressing the device-originated spikes helps to reduce the rework and simplify filter and snubber circuits.<\/p>

\nThe new product adopts the SOP Advance(E) package, which delivers approximately 65% lower package resistance and approximately 15% lower thermal resistance than Toshiba\u2019s current SOP Advance(N) package. By suppressing heat generation and improving heat dissipation, the package supports higher output and more compact power supply designs.<\/p>

\nToshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models<\/a>, which accurately reproduce transient characteristics, are now available. An online circuit simulator on the Toshiba website allows users to easily verify circuit operation in a web browser, with no need to set up a simulation environment or download device models. (Online circuit simulator: here<\/a>)<\/p>

\nToshiba will continue to expand its lineup of power MOSFETs that improve power supply efficiency, thereby helping to reduce power consumption in industrial equipment.<\/p>

\nNotes:\n[1] As of June 2026, based on Toshiba\u2019s low-voltage power MOSFET processes.\n[2] VGS<\/sub>=10V, ID<\/sub>=50A, Ta<\/sub>=25\u00b0C\n[3] Toshiba survey, as of June 2026.<\/p>

\nApplications<\/b><\/p>

\nIndustrial Equipment<\/p>