{"id":30315,"date":"2026-07-03T04:00:00","date_gmt":"2026-07-03T02:00:00","guid":{"rendered":"http:\/\/stocks-future.com\/?guid=c20766a031addb702d409d713b58e9c3"},"modified":"2026-07-03T04:00:00","modified_gmt":"2026-07-03T02:00:00","slug":"kioxia-commences-sample-shipments-of-10th-generation-bics-flash-devices-delivering-high-performance-high-capacity-and-low-power-consumption","status":"publish","type":"post","link":"https:\/\/stocks-future.com\/?p=30315","title":{"rendered":"Kioxia Commences Sample Shipments of 10th-Generation BiCS FLASH\u2122 Devices Delivering High Performance, High Capacity and Low Power Consumption"},"content":{"rendered":"

\nProduction planned at Fab2 of Kitakami Plant<\/i><\/p>

TOKYO--(BUSINESS WIRE)--Kioxia Corporation<\/a>, a world leader in memory solutions, today announced that it has commenced sample shipments of 1Tb (terabit) Triple-Level-Cell (TLC) memory devices utilizing its 10th-generation BiCS FLASH\u2122 3D flash memory technology.1<\/sup> These will be primarily integrated into the company\u2019s enterprise and data center SSDs, strengthening Kioxia\u2019s lineup to meet the growing demand for AI storage, which requires higher performance, higher capacity, and lower power consumption. These new products will be manufactured using state-of-the-art equipment at Kioxia\u2019s Kitakami Plant Fab2 facility in Iwate Prefecture, Japan.<\/p><\/a><\/a>

\nBy leveraging innovative CMOS directly Bonded to Array (CBA) technology2<\/sup> and On-Pitch Select Gate Drain (OPS) technology,3<\/sup> both adopted since the 8th-generation BiCS FLASH\u2122, the 10th-generation technology achieves a NAND interface speed of 4.8 Gb\/s,4<\/sup> a 33% improvement over the 8th generation. Bit density has increased by 59% by stacking 332 layers and improving lateral density. Additionally, write and read power efficiencies have improved by 18% and 30% respectively,5<\/sup> helping to reduce power consumption in data centers and enterprise infrastructure.<\/p>

\nUnder its unique dual-axis strategy, Kioxia is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.<\/p>

\nGuided by its mission of \u201cuplifting the world with \u2018memory,\u2019\u201d Kioxia remains committed to driving technological innovation, strengthening global partnerships, and delivering the advanced storage solutions that power modern AI infrastructure.<\/p>

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  1. \nThese samples are for the functional check purpose and the specifications of the samples may differ in mass production.<\/li>\n
  2. \nTechnology wherein each CMOS wafer and cell array wafer is manufactured separately in their optimized conditions and then bonded together.<\/li>\n
  3. \nTechnology that makes it possible to shorten the bit line and reduce the word line capacitance by removing unused memory holes.<\/li>\n
  4. \n1Gb\/s is calculated as 1,000,000,000bits\/second. This value is obtained in a specific test environment at Kioxia Corporation, and may vary depending on use conditions.<\/li>\n
  5. \nPower efficiency during data transfer was also included.<\/li>\n<\/ol>

    \nNotes:<\/p>