{"id":9319,"date":"2026-05-21T07:00:00","date_gmt":"2026-05-21T05:00:00","guid":{"rendered":"http:\/\/stocks-future.com\/?guid=636b43a7831679fb35d65f7b538036d3"},"modified":"2026-05-21T07:00:00","modified_gmt":"2026-05-21T05:00:00","slug":"toshiba-starts-shipping-test-samples-of-1200v-trench-gate-sic-mosfet-that-will-enhance-efficiency-in-next-generation-ai-data-centers","status":"publish","type":"post","link":"https:\/\/stocks-future.com\/?p=9319","title":{"rendered":"Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers"},"content":{"rendered":"

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation<\/a> (\"Toshiba\") today started shipping test samples of \u201cTW007D120E,\u201d a 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers that is also suitable for use in renewable energy-related equipment.<\/p><\/a><\/a><\/a><\/a>

\nWith the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. Toshiba has addressed these requirements for next-generation AI data centers by developing TW007D120E, which will contribute to lower power consumption and to the miniaturization and higher efficiency of power supply systems.<\/p>

\nTW007D120E is built around Toshiba\u2019s proprietary trench-gate structure[1]<\/sup>, which achieves industry-leading[2]<\/sup> low On-resistance per unit area (RDS(on)<\/sub>A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss. Compared with Toshiba\u2019s current products, TW007D120E reduces RDS(on)<\/sub>A by approximately 58%[3]<\/sup> and improves the figure of merit, On-resistance \u00d7 gate-drain charge (RDS(on)<\/sub> \u00d7 Qgd<\/sub>), which represents the trade-off between conduction loss and switching loss, by approximately 52%[3]<\/sup>. These characteristics will help to realize highly efficient operation and reduced heat generation in data center power supply systems and contribute to improved overall system efficiency.<\/p>

\nThe new product is housed in a QDPAK package that supports top-side cooling. This contributes to both higher power density implementation and enhanced thermal performance in the power stage, which are essential for power conversion in next-generation AI data centers.<\/p>

\nToshiba will prepare for mass production of TW007D120E during fiscal year 2026 and will continue to expand its lineup, including development for automotive applications. Through the trench-gate SiC MOSFET, the company will contribute to improved power efficiency and reduced CO\u2082 emissions in data centers and a wide range of industrial equipment, supporting the realization of a decarbonized society.<\/p>

\nTW007D120E is based on results obtained from JPNP21029, a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).<\/p>

\nNotes:\n[1] A device structure in which fine trenches are formed in the semiconductor substrate and gate electrodes are embedded within the trenches.\n[2] Toshiba research, as of May 2026.\n[3] Comparison of the newly developed 1200V SiC MOSFET with Toshiba\u2019s 3rd-generation SiC MOSFET (TW015Z120C). Toshiba research, as of May 2026.<\/p>

\nApplications<\/b><\/p>